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IXYS SEMICONDUCTOR  IXA33IF1200HB  IGBT Single Transistor, 58 A, 2.1 V, 250 W, 1.2 kV, TO-247AD, 3 Pins

IXYS SEMICONDUCTOR IXA33IF1200HB
Technical Data Sheet (125.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

DC Collector Current:
58A
Collector Emitter Saturation Voltage Vce(on):
2.1V
Power Dissipation Pd:
250W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
TO-247AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

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