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IXYS SEMICONDUCTOR  IXA55I1200HJ  IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins

IXYS SEMICONDUCTOR IXA55I1200HJ
Technical Data Sheet (113.55KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
-
Collector Emitter Saturation Voltage Vce(on):
2.1 V
Collector Emitter Voltage V(br)ceo:
1.2 kV
MSL:
-
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
290 W
Product Range:
-
SVHC:
No SVHC (15-Jun-2015)
Transistor Case Style:
TO-247AD

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Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

Associated Products

Similar Products

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  • Transistor Case Style: TO-247AD
  • Power Dissipation Pd: 290W
  • DC Collector Current: 84A
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Automotive Qualification Standard: -
  • Product Range: -
  • Operating Temperature Max: 150°C
  • No. of Pins: 3Pins
  • Collector Emitter Saturation Voltage Vce(on): 2.1V