IXYS SEMICONDUCTOR  IXA55I1200HJ  IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins

Technical Data Sheet (113.55KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Automotive Qualification Standard:
Collector Emitter Saturation Voltage Vce(on):
2.1 V
Collector Emitter Voltage V(br)ceo:
1.2 kV
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
290 W
Product Range:
No SVHC (15-Jun-2015)
Transistor Case Style:

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Tariff No:
Weight (kg):

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

  • Transistor Case Style: TO-247AD
  • Power Dissipation Pd: 290W
  • DC Collector Current: 84A
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Automotive Qualification Standard: -
  • Product Range: -
  • Operating Temperature Max: 150°C
  • No. of Pins: 3Pins
  • Collector Emitter Saturation Voltage Vce(on): 2.1V