Low

IXA60IF1200NA - 

IGBT Single Transistor, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins

IXYS SEMICONDUCTOR IXA60IF1200NA

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
IXA60IF1200NA
Order Code:
1829727
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
SOT-227B
:
290W
:
88A
:
1.2kV
:
-
:
-
:
150°C
:
4Pins
:
2.1V
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.
  • Easy to parallel due to the positive temperature coefficient of the on-state voltage
  • Reduced thermal resistance
  • Low energy losses
  • Fast switching
  • Low tail current
  • High power density
  • Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
  • Short circuit capability

Applications

Motor Drive & Control, Alternative Energy, Medical, Power Management

Associated Products