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IXYS SEMICONDUCTOR  IXA60IF1200NA  IGBT Single Transistor, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins

IXYS SEMICONDUCTOR IXA60IF1200NA
Technical Data Sheet (151.97KB) EN See all Technical Docs

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Product Overview

The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.
  • Easy to parallel due to the positive temperature coefficient of the on-state voltage
  • Reduced thermal resistance
  • Low energy losses
  • Fast switching
  • Low tail current
  • High power density
  • Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
  • Short circuit capability

Product Information

DC Collector Current:
88A
Collector Emitter Saturation Voltage Vce(on):
2.1V
Power Dissipation Pd:
290W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
SOT-227B
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Motor Drive & Control;
  • Alternative Energy;
  • Medical;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.03

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