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IXYS SEMICONDUCTOR  IXA60IF1200NA  IGBT Single Transistor, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins

IXYS SEMICONDUCTOR IXA60IF1200NA
Manufacturer Part No:
IXA60IF1200NA
Order Code:
1829727
Technical Datasheet:
See all Technical Docs

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Product Overview

The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the...
  • Easy to parallel due to the positive temperature coefficient of the on-state voltage
  • Reduced thermal resistance
  • Low energy losses
  • Fast switching
  • Low tail current
  • High power density
  • Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
  • Short circuit capability

Product Information

DC Collector Current:
88A
Collector Emitter Saturation Voltage Vce(on):
2.1V
Power Dissipation Pd:
290W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
SOT-227B
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Motor Drive & Control;
  • Alternative Energy;
  • Medical;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.03

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