Low

NXP  NX7002AK  MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V

NXP NX7002AK
Technical Data Sheet (258.57KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
  • Very Fast Switching
  • ESD Protection Upto 1.5kV

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
190mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.6V
Power Dissipation Pd:
265mW
Transistor Case Style:
TO-236AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Audio;
  • Power Management;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000005