Low

NXP  PBHV8118T  Bipolar (BJT) Single Transistor, NPN, 180 V, 30 MHz, 300 mW, 1 A, 250 hFE

NXP PBHV8118T
Technical Data Sheet (164.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Automotive Qualification Standard:
-
DC Collector Current:
1 A
DC Current Gain hFE:
250 hFE
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
300 mW
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)
Transistor Case Style:
SOT-23
Transistor Polarity:
NPN
Transition Frequency ft:
30 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000008

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

  • Power Dissipation Pd: 300mW
  • DC Collector Current: 1A
  • Collector Emitter Voltage V(br)ceo: 180V
  • Transition Frequency ft: 30MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: NPN
  • DC Current Gain hFE: 250hFE
  • No. of Pins: 3Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-23