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NXP  PBLS6022D  Bipolar (BJT) Single Transistor, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE

NXP PBLS6022D
Technical Data Sheet (109.38KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
480mW
DC Collector Current:
-1.5A
DC Current Gain hFE:
285hFE
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000011