NXP  PBRP113ET  Bipolar (BJT) Single Transistor, PNP, -40 V, 250 mW, -600 mA, 210 hFE

Technical Data Sheet (111.75KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
Collector Emitter Voltage V(br)ceo:
-40 V
DC Collector Current:
-600 mA
DC Current Gain hFE:
210 hFE
MSL 1 - Unlimited
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
250 mW
Product Range:
No SVHC (17-Dec-2015)
Transistor Case Style:
Transistor Polarity:
Transition Frequency ft:

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Tariff No:
Weight (kg):

Similar Products

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  • Power Dissipation Pd: 250mW
  • DC Collector Current: -600mA
  • Collector Emitter Voltage V(br)ceo: -40V
  • Transition Frequency ft: -
  • Operating Temperature Max: 150°C
  • Transistor Polarity: PNP
  • DC Current Gain hFE: 210hFE
  • No. of Pins: 3Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-23