NXP  PBSS5560PA  Bipolar (BJT) Single Transistor, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE

Technical Data Sheet (166.83KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
Collector Emitter Voltage V(br)ceo:
-60 V
DC Collector Current:
-5 A
DC Current Gain hFE:
265 hFE
MSL 1 - Unlimited
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
2.1 W
Product Range:
No SVHC (17-Dec-2015)
Transistor Case Style:
Transistor Polarity:
Transition Frequency ft:
90 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Tariff No:
Weight (kg):

Similar Products

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  • Power Dissipation Pd: 2.1W
  • DC Collector Current: -5A
  • Collector Emitter Voltage V(br)ceo: -60V
  • Transition Frequency ft: 90MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: PNP
  • DC Current Gain hFE: 265hFE
  • No. of Pins: 3Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-1061