Low

NXP  PBSS5630PA  Bipolar (BJT) Single Transistor, PNP, -30 V, 80 MHz, 2.1 W, -6 A, 345 hFE

NXP PBSS5630PA
Technical Data Sheet (351.00KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
-
Collector Emitter Voltage V(br)ceo:
-30 V
DC Collector Current:
-6 A
DC Current Gain hFE:
345 hFE
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
2.1 W
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)
Transistor Case Style:
SOT-1061
Transistor Polarity:
PNP
Transition Frequency ft:
80 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000008

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

  • Power Dissipation Pd: 2.1W
  • DC Collector Current: -6A
  • Collector Emitter Voltage V(br)ceo: -30V
  • Transition Frequency ft: 80MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: PNP
  • DC Current Gain hFE: 345hFE
  • No. of Pins: 3Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-1061