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NXP  PBSS9410PA  Bipolar (BJT) Single Transistor, PNP, -100 V, 115 MHz, 2.1 W, -2.7 A, 295 hFE

NXP PBSS9410PA
Technical Data Sheet (167.42KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
115MHz
Power Dissipation Pd:
2.1W
DC Collector Current:
-2.7A
DC Current Gain hFE:
295hFE
Transistor Case Style:
SOT-1061
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000008