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NXP  PDTC123EMB  Bipolar (BJT) Single Transistor, NPN, 50 V, 230 MHz, 250 mW, 100 mA, 30 hFE

NXP PDTC123EMB
Technical Data Sheet (713.03KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
230MHz
Power Dissipation Pd:
250mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-883B
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.00082

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