NXP  PEMB9  Bipolar Transistor Array, PNP, -50 V, 300 mW, -100 mA, 100 hFE, SOT-666

Technical Data Sheet (618.98KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
Collector Emitter Voltage V(br)ceo:
-50 V
DC Collector Current:
-100 mA
DC Current Gain hFE:
100 hFE
MSL 1 - Unlimited
No. of Pins:
6 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
300 mW
Product Range:
No SVHC (17-Dec-2015)
Transistor Case Style:
Transistor Polarity:

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Tariff No:
Weight (kg):

Similar Products

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  • DC Current Gain hFE: 100hFE
  • Transistor Case Style: SOT-666
  • Transistor Polarity: PNP
  • Power Dissipation Pd: 300mW
  • DC Collector Current: -100mA
  • Collector Emitter Voltage V(br)ceo: -50V
  • Automotive Qualification Standard: -
  • Product Range: -
  • Operating Temperature Max: 150°C
  • No. of Pins: 6Pins