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  PMBTA45  Bipolar (BJT) Single Transistor, NPN, 500 V, 35 MHz, 300 mW, 150 mA, 100 hFE

 PMBTA45
Manufacturer:
Manufacturer Part No:
PMBTA45
Order Code:
1829377RL
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module, LCD backlighting, flyback converters and SMPS applications.
  • Complement to the PBHV9050T
  • AEC-Q101 qualified
  • 150°C Junction temperature
  • High collector current capability
  • High collector current gain
  • High voltage

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
500V
Transition Frequency ft:
35MHz
Power Dissipation Pd:
300mW
DC Collector Current:
150mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management
  • Consumer Electronics
  • Lighting
  • LED Lighting
  • Automotive

Legislation and Environmental

Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000008

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Bipolar (BJT) Single Transistor, NPN, 500 V, 35 MHz, 300 mW, 150 mA, 100 hFE

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