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NXP  PMBTA45  Bipolar (BJT) Single Transistor, NPN, 500 V, 35 MHz, 300 mW, 150 mA, 100 hFE

NXP PMBTA45
Technical Data Sheet (144.04KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module, LCD backlighting, flyback converters and SMPS applications.
  • Complement to the PBHV9050T
  • AEC-Q101 qualified
  • 150°C Junction temperature
  • High collector current capability
  • High collector current gain
  • High voltage

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
500V
Transition Frequency ft:
35MHz
Power Dissipation Pd:
300mW
DC Collector Current:
150mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Lighting;
  • LED Lighting;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000008

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