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ON SEMICONDUCTOR  NCP5901DR2G  MOSFET Driver, High Side And Low Side, 4.5V-13.2V Supply, -11ns Delay, SOIC-8

ON SEMICONDUCTOR NCP5901DR2G
Technical Data Sheet (134.55KB) EN See all Technical Docs

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Product Overview

The NCP5901DR2G is a dual high performance MOSFET Gate Driver optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. It can drive up to 3nF load with a 25ns propagation delay and 20ns transition time. Adaptive anti-cross-conduction and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an under-voltage lockout function guarantees the outputs are low when supply voltage is low.
  • Faster rise and fall times
  • Adaptive anti-cross-conduction circuit
  • Pre OV function
  • ZCD detect
  • Floating top driver accommodates boost voltages of up to 35V
  • Output disable control turn-OFF both MOSFETs
  • Under-voltage lockout
  • Power saving operation under light load conditions
  • Direct interface to NCP6151 and other compatible PWM controllers

Product Information

Driver Configuration:
High Side and Low Side
Peak Output Current:
-
Supply Voltage Min:
4.5V
Supply Voltage Max:
13.2V
Driver Case Style:
SOIC
No. of Pins:
8Pins
Input Delay:
16ns
Output Delay:
11ns
Operating Temperature Min:
-10°C
Operating Temperature Max:
125°C
Packaging:
Cut Tape
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423990
Weight (kg):
.00002

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