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ON SEMICONDUCTOR  NDD02N60ZT4G  Power MOSFET, N Channel, 2.2 A, 600 V, 4 ohm, 10 V, 4.5 V

ON SEMICONDUCTOR NDD02N60ZT4G
Technical Data Sheet (142.41KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2.2A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4.5V
Power Dissipation Pd:
57W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143

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