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STMICROELECTRONICS  L6384ED  IGBT/MOSFET Driver, Half Bridge, 11.5V-16.6V Supply, 650mA Out, 200ns Delay, SOIC-8

STMICROELECTRONICS L6384ED
Technical Data Sheet (331.46KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The L6384ED is a High-voltage Gate Driver, manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT devices. This device has one input pin, one enable pin (DT/SD) and two output pins and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
  • 600V High voltage rail
  • dV/dt Immunity ±50V/nsec in full temperature range
  • 400mA Source current
  • 650mA Sink current
  • Switching times 50/30ns rise/fall with 1nF load
  • Shutdown input
  • Dead time setting
  • Under voltage lockout
  • Integrated bootstrap diode
  • Clamping on VCC

Product Information

Driver Configuration:
Half Bridge
Peak Output Current:
650mA
Supply Voltage Min:
11.5V
Supply Voltage Max:
16.6V
Driver Case Style:
SOIC
No. of Pins:
8Pins
Input Delay:
200ns
Output Delay:
200ns
Operating Temperature Min:
-45°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • HVAC;
  • Motor Drive & Control;
  • Lighting;
  • Automation & Process Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423300
Weight (kg):
.000227

Associated Products