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STMICROELECTRONICS  L6392D  IGBT/MOSFET Driver, High Side And Low Side, 12.5V-20V Supply, 430mA Out, 125ns Delay, SOIC-14

STMICROELECTRONICS L6392D
Technical Data Sheet (580.62KB) EN See all Technical Docs

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Product Overview

The L6392D is a high voltage High and Low-side Driver manufactured with the BCD OFF-LINE technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600V. The logic inputs are CMOS/TTL compatible down to 3.3V for easy interfacing microcontroller/DSP. The IC embeds an operational amplifier suitable for advanced current sensing in applications such as field oriented motor control.
  • CMOS/TTL inputs with hysteresis
  • Integrated bootstrap diode
  • Operational amplifier for advanced current sensing
  • Adjustable dead-time
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design
  • dV/dt immunity of ±50V/ns in full temperature range
  • Driver current capability - 290mA Source and 430mA sink
  • 75/35ns Rise/fall with 1nF load switching time

Product Information

Driver Configuration:
High Side and Low Side
Peak Output Current:
430mA
Supply Voltage Min:
12.5V
Supply Voltage Max:
20V
Driver Case Style:
SOIC
No. of Pins:
14Pins
Input Delay:
125ns
Output Delay:
125ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Consumer Electronics;
  • Building Automation;
  • Industrial;
  • Motor Drive & Control;
  • Lighting;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423300
Weight (kg):
.000638

Associated Products