Low

TLV1117LV33DCYR - 

Fixed LDO Voltage Regulator, 2V to 5.5V, 455mV Dropout, 3.3Vout, 1Aout, SOT-223-4

TEXAS INSTRUMENTS TLV1117LV33DCYR

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Manufacturer Part No:
TLV1117LV33DCYR
Order Code:
2323647
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
5.5V
:
3.3V
:
-40°C
:
1A
:
-
:
125°C
:
4Pins
:
-
:
Fixed
:
2V
:
3.3V 1A LDO Voltage Regulators
:
-
:
SOT-223
:
Cut Tape
:
455mV
:
MSL 1 - Unlimited
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Product Overview

The TLV1117LV33DCYR is a low-dropout (LDO) Linear Voltage Regulator, low input voltage version of the popular TLV1117 voltage regulator. It is an extremely low-power device that consumes 500 times lower quiescent current than traditional 1117 voltage regulators, making the device suitable for applications that mandate very low standby current. The TLV1117LV family of LDOs is also stable with 0mA of load current; there is no minimum load requirement, making the device an ideal choice for applications where the regulator must power very small loads during standby in addition to large currents on the order of 1A during normal operation. It offers excellent line and load transient performance, resulting in very small magnitude undershoots and overshoots of output voltage when the load current requirement changes from less than 1mA to more than 500mA.
  • 1.5% Typical Accuracy
  • 100µA (Maximum) Low IQ, 500 Times Lower Than Standard 1117 Devices
  • 2 to 5.5V VIN, Absolute Maximum VIN = 6V
  • Stable with 0mA Output Current
  • 455mV at 1A for VOUT = 3.3V Low Dropout
  • 65dB at 1kHz High PSRR
  • 1.1A Minimum Ensured Current Limit
  • With 0R ESR Stable with Cost-effective Ceramic Capacitors
  • Thermal Shutdown and Over-current Protection
  • Green Product, No Sb/Br

Applications

Signal Processing, Consumer Electronics, Computers & Computer Peripherals, Communications & Networking, Power Management

Warnings

Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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