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VISHAY  SI7119DN-T1-GE3  MOSFET Transistor, P Channel, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V

VISHAY SI7119DN-T1-GE3
Technical Data Sheet (556.31KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
-
Continuous Drain Current Id:
3.8 A
Drain Source Voltage Vds:
-200 V
MSL:
MSL 1 - Unlimited
No. of Pins:
8 Pins
On Resistance Rds(on):
0.86 ohm
Operating Temperature Max:
150 °C
Power Dissipation Pd:
3.7 W
Product Range:
-
Rds(on) Test Voltage Vgs:
-10 V
SVHC:
No SVHC (15-Jun-2015)
Threshold Voltage Vgs:
-4 V
Transistor Case Style:
PowerPAK 1212
Transistor Polarity:
P Channel

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000322

Similar Products

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  • Power Dissipation Pd: 3.7W
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 3.8A
  • Transistor Polarity: P Channel
  • No. of Pins: 8Pins
  • Threshold Voltage Vgs: -4V
  • Product Range: -
  • Automotive Qualification Standard: -
  • Drain Source Voltage Vds: -200V
  • Rds(on) Test Voltage Vgs: -10V
  • Transistor Case Style: PowerPAK 1212
  • On Resistance Rds(on): 0.86ohm