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VISHAY  SI9410BDY-T1-GE3  MOSFET Transistor, N Channel, 6.2 A, 30 V, 0.019 ohm, 10 V, 1 V

VISHAY SI9410BDY-T1-GE3
Technical Data Sheet (101.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.019ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000269

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