Switches & Drivers based on Silicon technology
Kelvin Source CoolMOS™ superjunction MOSFETs
With CoolMOS™ SJ MOSFET products, Infineon is setting new standards for energy efficiency, power density and ease of use, boasting figures of merit in terms of conduction, switching and driving losses.
The broadest Silicon based superjunction MOSFET portfolio on the market impresses with wide RDS(on) granularity, best-in-class RDS(on) / package, highest efficiency with an optimized price/performance ratio and low EOSS, Qg.
600 V CoolMOS™ G7 SJ MOSFET and CoolSiC™ Schottky diode G6 in Double DPAK (DDPAK) package
With 600 V CoolMOS™ SJ MOSFET G7 and 650 V CoolSiC™ Schottky diode G6 - both available in DDPAK package - Infineon provides a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. By combining the DDPAK offering with Infineon’s single-channel, low-side gate driver family with truly differential inputs (1EDN TDI) optimized system solutions for high power designs are enabled.
EiceDRIVER™ 1EDN7550 and 1EDN8550 single-channel, low-side, non-isolated gate driver ICs with truly differential inputs
Infineon’s newly launched EiceDRIVER™ 1EDN7550 and 1EDN8550 single-channel, low-side, non-isolated gate driver ICs, have truly differential inputs. Hence, they are perfectly suited for SMPS with ground shift challenges. Characteristically, their control signal inputs are largely independent from the ground potential. Only the voltage difference between the input contacts is relevant. This prevents false triggering of power MOSFETs.