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MD400HFR120C2S

MOSFET Transistor, Silicon Carbide, Dual N Channel, 542 A, 1.2 kV, 0.0033 ohm, 18 V, 5.6 V

MD400HFR120C2S - MOSFET Transistor, Silicon Carbide, Dual N Channel, 542 A, 1.2 kV, 0.0033 ohm, 18 V, 5.6 V

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Manufacturer:
STARPOWER STARPOWER
Manufacturer Part No:
MD400HFR120C2S
Order Code:
2986059
Technical Datasheet:
MD400HFR120C2S   Datasheet
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Product Overview

Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.

Product Information

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:
Dual N Channel

:
542A

:
1.2kV

:
0.0033ohm

:
18V

:
5.6V

:
-

:
150°C

:
-

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Technical Docs (1)

6 total stock globally Need more?

6 available for 4 - 5 business days delivery

$1,802.46 ( $2,072.83  Inc. GST)

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