Print Page
IXTN660N04T4
MOSFET Transistor, N Channel, 660 A, 40 V, 850 µohm, 10 V, 4 V
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXTN660N04T4Copy |
| Order Code | 4060239 |
| Product Range | TrenchT4 Series |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXTN660N04T4Copy |
| Order Code | 4060239 |
| Product Range | TrenchT4 Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 660A |
| Drain Source Voltage Vds | 40V |
| Drain Source On State Resistance | 850µohm |
| Transistor Case Style | SOT-227 |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Transistor Mounting | Module |
| Power Dissipation | 1.04kW |
| Operating Temperature Max | 175°C |
| No. of Pins | 4Pins |
| Product Range | TrenchT4 Series |
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 40V |
| Transistor Case Style | SOT-227 |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 1.04kW |
| No. of Pins | 4Pins |
| Continuous Drain Current Id | 660A |
|---|---|
| Drain Source On State Resistance | 850µohm |
| Rds(on) Test Voltage | 10V |
| Transistor Mounting | Module |
| Operating Temperature Max | 175°C |
| Product Range | TrenchT4 Series |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | South Korea Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .044452 |