NV6523-RA
Power IC, GaNsafe, 11 to 18V, 45 mohm, -40 to 150 °C, Top Cooled, TOLL-16
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $46.920 ($53.958) |
| 10+ | $37.840 ($43.516) |
| 25+ | $35.970 ($41.3655) |
Product Information
Product Overview
NV6523-RA is a power IC. It is a thermally-enhanced top-cooled SMD version of the GaNFast™ power IC family, optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and high efficiency power systems in data centre, solar, industrial, and automotive segments. The GaNFast power IC integrates GaN FET(s) with gate drive to create an easy-to-use power stage building block. The GaNSafe technology further integrates critical protection and performance features that enable unprecedented reliability and robustness. Applications/topologies include AC-DC, DC-DC, CCM or CrM TP-PFC, optimized for synchronous half-bridge, full bridge, 3-phase, or buck/boost operation, data centre CRPS, and solar inverter/ESS, EV OBC and DC-DC converter, and motor drive.
- Paralleling capability up to 2x power ICs
- Zero reverse-recovery charge, 2kV ESD all pins
- Turn-ON and Turn-OFF dV/dt programmability
- VDS: 650V continuous / 800V transient
- Drain-source leakage current is 2.5µA typ at VDS = 650V, VDRIVE = 0V
- Drain-source resistance is 32mohm typ at VDRIVE = 15V, IDS = 17A
- JEDEC and IPC-9701 qualifications
- dV/dt immunity up to 100V/ns
- TOLT-16L top-cooled SMD package
- Junction temperature range from -40 to +150°C
Technical Specifications
GaNsafe Power IC
18V
16Pins
150°C
-
11V
TOLL
-40°C
-
No SVHC (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate