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BD912
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 15 A, 90 W, TO-220AB, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $3.940 ($4.531) |
| 10+ | $1.900 ($2.185) |
| 100+ | $1.630 ($1.8745) |
| 500+ | $1.450 ($1.6675) |
| 1000+ | $1.240 ($1.426) |
| 5000+ | $1.130 ($1.2995) |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBD912
Order Code1084576
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Continuous Collector Current15A
Power Dissipation90W
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications.
- 5A Base current
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
15A
Transistor Case Style
TO-220AB
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Power Dissipation
90W
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002649