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Quantity | Price (Incl GST) |
---|---|
1+ | $99.100 ($113.965) |
10+ | $78.330 ($90.0795) |
25+ | $75.820 ($87.193) |
100+ | $73.570 ($84.6055) |
Product Information
Product Overview
HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01GHz to 10GHz. It provides a typical gain of 19.5dB, a 1.1dB typical noise figure, and a typical output IP3 of 33dBm, requiring only 65mA from a 5V supply voltage. The saturated output power (PSAT) of upto 22.5dBm enables the low noise amplifier(LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers. It also features inputs/outputs (I/Os) that are internally matched to 50 ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. It is used in application such as software defined radios, electronic warfare, radar applications etc.
- Input return loss is 15dB typ at (0.01GHz to 3GHz, TA = 25°C)
- Output return loss is 24dB typ at (0.01GHz to 3GHz, TA = 25°C)
- Operating temperature is -40°C to +85°C
- Package style is 6-lead LFCSP
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
10MHz
19.5dB
LFCSP-EP
2V
-40°C
-
MSL 3 - 168 hours
10GHz
1.7dB
6Pins
6V
85°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate