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NGB15T65M3DFPJ
IGBT, 33 A, 1.53 V, 127 W, 650 V, TO-263AB (D2PAK), 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNGB15T65M3DFPJCopy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel4745451RL
Cut Tape4745451
Your Part Number
800 total stock globally
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800 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.700 | $4.70 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.700 ($5.405) |
| 10+ | $3.040 ($3.496) |
| 100+ | $2.090 ($2.4035) |
| 500+ | $1.820 ($2.093) |
| 1000+ | $1.650 ($1.8975) |
| 5000+ | $1.480 ($1.702) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGB15T65M3DFPJCopy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel4745451RL
Cut Tape4745451
Technical Datasheet
Continuous Collector Current33A
Collector Emitter Saturation Voltage1.53V
Power Dissipation127W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-263AB (D2PAK)
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
SVHCLead (25-Jun-2025)
Product Overview
NGB15T65M3DFPJ is a 650V, 15A trench field-stop IGBT with full rated silicon diode in a 3 pin D2PAK package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 15 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
Technical Specifications
Continuous Collector Current
33A
Power Dissipation
127W
Transistor Case Style
TO-263AB (D2PAK)
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.53V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001