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Quantity | Price (Incl GST) |
---|---|
1+ | $6.350 ($7.3025) |
10+ | $6.000 ($6.900) |
Product Information
Product Overview
The CY62147EV30LL-45ZSXI is a 4-Mbit high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing the write enable HIGH.
- Very high speed - 45ns
- Pin compatible with CY62147DV30
- Ultralow standby power
- Ultralow active power
- Easy memory expansion with CE and OE
- Automatic power down when deselected
- CMOS for optimum speed/power
Applications
Computers & Computer Peripherals, Industrial, Portable Devices
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Asynchronous SRAM
256K x 16bit
44Pins
3.6V
-
-40°C
-
4Mbit
TSOP
2.2V
3V
Surface Mount
85°C
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate