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S29GL01GT10TFI010
Flash Memory, MirrorBit Eclipse Architecture, Parallel NOR, 1 Gbit, 128M x 8bit, CFI, Parallel
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10TFI010
Order Code2768056
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664115, S29GL01GT10TFI010
Technical Datasheet
1,595 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $22.370 ($25.7255) |
| 10+ | $21.090 ($24.2535) |
| 25+ | $20.710 ($23.8165) |
| 50+ | $20.490 ($23.5635) |
| 100+ | $20.260 ($23.299) |
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Multiple: 1
$22.37 ($25.73 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10TFI010
Order Code2768056
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664115, S29GL01GT10TFI010
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Configuration128M x 8bit
InterfacesCFI, Parallel
IC Case / PackageTSOP
No. of Pins56Pins
Clock Frequency Max-
Access Time100ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GT10TFI010 is a 1Gb (128MB), parallel 3.0V, GL-T MIRRORBIT™ flash memory. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time speed, fabricated on 45nm process technology
- VIO=VCC=2.7V to 3.6V, highest address sector protected CFI Version 1.5
- Single supply (VCC) for read / program / erase (2.7V to 3.6V)
- Versatile I/O feature - wide I/O voltage range (VIO) 1.65V to VCC
- ×8/×16 data bus, asynchronous 32-byte page read
- Automatic error checking and correction (ECC) internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- 100,000 program/erase cycles, 20-year data retention
- TSOP package, industrial temperature range from -40°C to +85°C
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Configuration
128M x 8bit
IC Case / Package
TSOP
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Interfaces
CFI, Parallel
No. of Pins
56Pins
Access Time
100ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85423269
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003714