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DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 500+ | $0.146 ($0.1679) |
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Minimum: 500
Multiple: 5
$73.00 ($83.95 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7
Order Code2543535RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id3.8A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.034ohm
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.034ohm
Drain Source On State Resistance P Channel0.034ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleTSOT-26
Power Dissipation Pd850mW
No. of Pins6Pins
Power Dissipation N Channel850mW
Power Dissipation P Channel850mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
3.8A
On Resistance Rds(on)
0.034ohm
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance N Channel
0.034ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation P Channel
850mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
3.8A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.034ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
850mW
Power Dissipation N Channel
850mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005