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DMG6602SVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVT-7
Order Code3127319RL
Your Part Number
Technical Datasheet
17,980 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.298 ($0.3427) |
| 500+ | $0.171 ($0.1966) |
| 1500+ | $0.169 ($0.1944) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$29.80 ($34.27 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVT-7
Order Code3127319RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id3.4A
Continuous Drain Current Id N Channel3.4A
On Resistance Rds(on)0.038ohm
Continuous Drain Current Id P Channel3.4A
Drain Source On State Resistance N Channel0.038ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.038ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation Pd840mW
Power Dissipation N Channel840mW
Power Dissipation P Channel840mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
3.4A
Continuous Drain Current Id P Channel
3.4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TSOT-26
Power Dissipation Pd
840mW
Power Dissipation P Channel
840mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
3.4A
On Resistance Rds(on)
0.038ohm
Drain Source On State Resistance N Channel
0.038ohm
Drain Source On State Resistance P Channel
0.038ohm
Gate Source Threshold Voltage Max
2.3V
No. of Pins
6Pins
Power Dissipation N Channel
840mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121