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DMG6602SVT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.622 ($0.7153) |
| 10+ | $0.341 ($0.3922) |
| 100+ | $0.175 ($0.2012) |
| 500+ | $0.158 ($0.1817) |
| 1000+ | $0.145 ($0.1668) |
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Multiple: 5
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVT
Order Code2061522
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel3.4A
Drain Source On State Resistance N Channel0.038ohm
Drain Source On State Resistance P Channel0.038ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel1.12W
Power Dissipation P Channel1.12W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting.
- Automotive grade AEC-Q101 qualified
- UL recognized
- Drain to source voltage (Vds) of 30V
- Gate to source voltage (Vgs) of ±20V
- Continuous drain current of 3.4A
- Power dissipation (Pd) of 1.27W
- Operating temperature range -55°C to 150°C
- Low on state resistance of 38mohm at Vgs of 10V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial, Automotive
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.4A
Drain Source On State Resistance P Channel
0.038ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.12W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.038ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
1.12W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000027