Print Page
DMN10H6D2LFDB-7
Dual MOSFET, N Channel, 100 V, 100 V, 270 mA, 270 mA, 6 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H6D2LFDB-7
Order Code3828401RL
Your Part Number
Technical Datasheet
2,100 total stock globally
Need more?
2100 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.304 ($0.3496) |
| 500+ | $0.224 ($0.2576) |
| 1000+ | $0.143 ($0.1644) |
| 5000+ | $0.137 ($0.1576) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$30.40 ($34.96 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H6D2LFDB-7
Order Code3828401RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id270mA
Drain Source Voltage Vds P Channel100V
On Resistance Rds(on)3.4ohm
Continuous Drain Current Id N Channel270mA
Continuous Drain Current Id P Channel270mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel6ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max2V
Transistor Case StyleU-DFN2020
Power Dissipation Pd1W
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
270mA
On Resistance Rds(on)
3.4ohm
Continuous Drain Current Id P Channel
270mA
Drain Source On State Resistance N Channel
6ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
U-DFN2020
No. of Pins
6Pins
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
270mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1W
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001