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DMN63D8LDW-7
Dual MOSFET, N Channel, 30 V, 30 V, 260 mA, 260 mA, 2.8 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 500+ | $0.102 ($0.1173) |
| 1500+ | $0.100 ($0.115) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LDW-7
Order Code2543518RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id260mA
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)2.8ohm
Continuous Drain Current Id N Channel260mA
Continuous Drain Current Id P Channel260mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel2.8ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel2.8ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
Power Dissipation Pd400mW
Power Dissipation N Channel400mW
Power Dissipation P Channel400mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low input capacitance, ESD protected gate
- Fast switching speed, small surface mount package
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 220mA at TA = +25°C, VGS = 10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 300mW at TA = +25°C
- Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
- SOT363 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
260mA
On Resistance Rds(on)
2.8ohm
Continuous Drain Current Id P Channel
260mA
Drain Source On State Resistance N Channel
2.8ohm
Drain Source On State Resistance P Channel
2.8ohm
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
400mW
Power Dissipation P Channel
400mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
260mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000318