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BSO150N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.0125 ohm
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ManufacturerINFINEON
Manufacturer Part NoBSO150N03MDGXUMA1
Order Code2480752RL
Also Known AsBSO150N03MD G, SP000447476
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.949 ($1.0914) |
| 500+ | $0.804 ($0.9246) |
| 1000+ | $0.713 ($0.820) |
| 5000+ | $0.625 ($0.7188) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$94.90 ($109.14 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO150N03MDGXUMA1
Order Code2480752RL
Also Known AsBSO150N03MD G, SP000447476
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0125ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0125ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0125ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2V
No. of Pins8Pins
Power Dissipation Pd1.4W
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSO150N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.0125ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
0.0125ohm
Drain Source On State Resistance P Channel
0.0125ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1.4W
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005