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BSO220N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 6 A, 6 A, 0.0183 ohm
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ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1
Order Code2432714
Also Known AsBSO220N03MD G, SP000447478
Technical Datasheet
5,113 total stock globally
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5113 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.160 ($1.334) |
| 50+ | $0.971 ($1.1166) |
| 100+ | $0.786 ($0.9039) |
| 500+ | $0.657 ($0.7556) |
| 1000+ | $0.598 ($0.6877) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.80 ($6.67 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1
Order Code2432714
Also Known AsBSO220N03MD G, SP000447478
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.0183ohm
Drain Source On State Resistance P Channel0.0183ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSO220N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance
- Excellent gate charge
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.0183ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.0183ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006