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FF17MR12W1M1HB11BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 50 A, 1.2 kV, 0.0162 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF17MR12W1M1HB11BPSA1
Order Code421650801
Also Known AsFF17MR12W1M1H_B11, SP005634554
Technical Datasheet
22 total stock globally
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22 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $104.190 ($119.8185) |
Price for:Each
Minimum: 1
Multiple: 1
$104.19 ($119.82 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF17MR12W1M1HB11BPSA1
Order Code421650801
Also Known AsFF17MR12W1M1H_B11, SP005634554
Technical Datasheet
Continuous Drain Current Id50A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0162ohm
No. of Pins18Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation20mW
Operating Temperature Max175°C
Technical Specifications
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.0162ohm
Rds(on) Test Voltage
18V
Power Dissipation
20mW
Drain Source Voltage Vds
1.2kV
No. of Pins
18Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00063