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IDM10G120C5XTMA1
Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 38 A, 41 nC, TO-252 (DPAK)
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ManufacturerINFINEON
Manufacturer Part NoIDM10G120C5XTMA1
Order Code2780807
Product RangethinQ 5G 1200V
Also Known AsIDM10G120C5, SP001127116
Technical Datasheet
3,186 total stock globally
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3186 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $8.370 ($9.6255) |
| 10+ | $5.550 ($6.3825) |
| 100+ | $3.960 ($4.554) |
| 500+ | $3.290 ($3.7835) |
| 1000+ | $3.190 ($3.6685) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$8.37 ($9.63 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIDM10G120C5XTMA1
Order Code2780807
Product RangethinQ 5G 1200V
Also Known AsIDM10G120C5, SP001127116
Technical Datasheet
Product RangethinQ 5G 1200V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current38A
Total Capacitive Charge41nC
Diode Case StyleTO-252 (DPAK)
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
5th Generation thinQ!™ 1200V SiC Schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are System efficiency improvement over Si diodes, system cost / size savings due to reduced cooling requirements, enabling higher frequency / increased power density solutions, higher system reliability due to lower operating temperatures and reduced EMI.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Product Range
thinQ 5G 1200V
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
41nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (21-Jan-2025)
Diode Configuration
Single
Average Forward Current
38A
Diode Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426