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Quantity | Price (Incl GST) |
---|---|
1+ | $2.530 ($2.9095) |
10+ | $1.770 ($2.0355) |
100+ | $1.380 ($1.587) |
500+ | $1.180 ($1.357) |
1000+ | $1.160 ($1.334) |
5000+ | $1.130 ($1.2995) |
Product Information
Product Overview
The IGB10N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of Trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft and fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 5μs Short-circuit withstand time
- Green product
- Halogen-free
Applications
Power Management, Alternative Energy, Consumer Electronics, HVAC, Maintenance & Repair
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
10A
110W
TO-263 (D2PAK)
175°C
-
No SVHC (21-Jan-2025)
2.05V
600V
3Pins
Surface Mount
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate