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IGLD65R110D2AUMA1
Gallium Nitride (GaN) Transistor, 650 V, 14 A, 0.14 ohm, 2.4 nC, LSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGLD65R110D2AUMA1
Order Code4680828RL
Also Known AsIGLD65R110D2, SP005918714
Technical Datasheet
1,914 total stock globally
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1914 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $4.110 ($4.7265) |
| 500+ | $3.640 ($4.186) |
| 1000+ | $3.460 ($3.979) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$411.00 ($472.65 inc GST)
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Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.14ohm
No. of Pins
8Pins
Continuous Drain Current Id
14A
Typical Gate Charge
2.4nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001