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IGP50N60TXKSA1
IGBT, 50 A, 2 V, 333 W, 600 V, TO-220, 3 Pins
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ManufacturerINFINEON
Manufacturer Part NoIGP50N60TXKSA1
Order Code1832355
Also Known AsIGP50N60T, SP000683046
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $7.370 ($8.4755) |
| 10+ | $5.760 ($6.624) |
| 100+ | $4.720 ($5.428) |
| 500+ | $4.000 ($4.600) |
| 1000+ | $3.530 ($4.0595) |
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Multiple: 1
$7.37 ($8.48 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGP50N60TXKSA1
Order Code1832355
Also Known AsIGP50N60T, SP000683046
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2V
Power Dissipation333W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
- ±20V Gate to emitter voltage (VGE)
- 0.45K/W IGBT thermal resistance, junction to case
- 40K/W IGBT thermal resistance, junction - ambient
Applications
Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
333W
Transistor Case Style
TO-220
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195