IKW40N120T2FKSA1
IGBT, 75 A, 1.75 V, 480 W, 1.2 kV, TO-247, 3 Pins
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $15.430 ($17.7445) |
| 5+ | $14.330 ($16.4795) |
| 10+ | $13.230 ($15.2145) |
| 50+ | $12.120 ($13.938) |
| 100+ | $11.010 ($12.6615) |
| 250+ | $9.720 ($11.178) |
Product Information
Product Overview
The IKW40N120T2 is a Low Loss IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel emitter controlled diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled HE diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 10µs Short-circuit withstand time
Applications
Power Management, Alternative Energy, Motor Drive & Control, Consumer Electronics
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
75A
480W
TO-247
175°C
-
No SVHC (21-Jan-2025)
1.75V
1.2kV
3Pins
Through Hole
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate