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IPB80N06S2L07ATMA3
Power MOSFET, N Channel, 55 V, 80 A, 6700 µohm, TO-263 (D2PAK), Surface Mount
488 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $3.540 ($4.071) |
| 500+ | $2.970 ($3.4155) |
| 1000+ | $2.310 ($2.6565) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$354.00 ($407.10 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80N06S2L07ATMA3
Order Code2781073RL
Product RangeOptiMOS
Also Known AsIPB80N06S2L-07, SP001067890
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance6700µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
OptiMOS
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001