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IPG20N04S4L08ATMA1
Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 0.0072 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPG20N04S4L08ATMA1
Order Code2480842RL
Also Known AsIPG20N04S4L-08, SP000705576
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.250 ($1.4375) |
| 500+ | $0.913 ($1.050) |
| 1000+ | $0.841 ($0.9672) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$125.00 ($143.75 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPG20N04S4L08ATMA1
Order Code2480842RL
Also Known AsIPG20N04S4L-08, SP000705576
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id20A
Drain Source Voltage Vds P Channel40V
On Resistance Rds(on)0.0072ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0072ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0072ohm
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleTDSON
No. of Pins8Pins
Power Dissipation Pd54W
Power Dissipation N Channel54W
Power Dissipation P Channel54W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPG20N04S4L-08 is an OptiMOS™-T2 dual N-channel enhancement-mode Power Transistor for small loads control switching and body applications.
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0072ohm
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance N Channel
0.0072ohm
Drain Source On State Resistance P Channel
0.0072ohm
Transistor Case Style
TDSON
Power Dissipation Pd
54W
Power Dissipation P Channel
54W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
20A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Power Dissipation N Channel
54W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005