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IPP114N12N3GXKSA1
Power MOSFET, N Channel, 120 V, 75 A, 9800 µohm, TO-220, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.950 ($5.6925) |
| 10+ | $2.500 ($2.875) |
| 100+ | $2.250 ($2.5875) |
| 500+ | $1.800 ($2.070) |
| 1000+ | $1.690 ($1.9435) |
| 5000+ | $1.590 ($1.8285) |
Price for:Each
Minimum: 1
Multiple: 1
$4.95 ($5.69 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP114N12N3GXKSA1
Order Code2709956
Product RangeOptiMOS 3
Also Known AsIPP114N12N3 G, SP000652740
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id75A
Drain Source On State Resistance9800µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
9800µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454