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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.810 ($5.5315) |
| 10+ | $2.190 ($2.5185) |
| 100+ | $1.990 ($2.2885) |
| 500+ | $1.750 ($2.0125) |
| 1000+ | $1.720 ($1.978) |
| 5000+ | $1.700 ($1.955) |
Product Information
Product Overview
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Motor Drive & Control, Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
130A
TO-220AB
10V
330W
175°C
-
No SVHC (25-Jun-2025)
75V
7800µohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Alternatives for IRF1407PBF
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate