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IRF7103TRPBF
Dual MOSFET, N Channel, 50 V, 50 V, 3 A, 3 A, 0.11 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7103TRPBF
Order Code2467996RL
Also Known AsSP001562004
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 50+ | $0.822 ($0.9453) |
| 250+ | $0.637 ($0.7326) |
| 1000+ | $0.578 ($0.6647) |
| 2000+ | $0.523 ($0.6015) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$82.20 ($94.53 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7103TRPBF
Order Code2467996RL
Also Known AsSP001562004
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id3A
Continuous Drain Current Id N Channel3A
On Resistance Rds(on)0.11ohm
Continuous Drain Current Id P Channel3A
Drain Source On State Resistance N Channel0.11ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.11ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRF7103TRPBF
1 Product Found
Product Overview
The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
3A
Continuous Drain Current Id P Channel
3A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
50V
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.11ohm
Drain Source On State Resistance N Channel
0.11ohm
Drain Source On State Resistance P Channel
0.11ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00031