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Quantity | Price (Incl GST) |
---|---|
50+ | $1.170 ($1.3455) |
250+ | $0.958 ($1.1017) |
1000+ | $0.752 ($0.8648) |
2000+ | $0.690 ($0.7935) |
Product Information
Product Overview
The IRF7306TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
30V
30V
3.6A
3.6A
Surface Mount
10V
SOIC
8Pins
2W
-
-
No SVHC (21-Jan-2025)
P Channel
30V
3.6A
0.1ohm
0.1ohm
0.1ohm
1V
2W
2W
150°C
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate