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IRF7309TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4 A, 4 A, 0.05 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7309TRPBF
Order Code2468006RL
Also Known AsSP001554164
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.878 ($1.0097) |
| 500+ | $0.729 ($0.8384) |
| 1000+ | $0.531 ($0.6106) |
| 5000+ | $0.522 ($0.6003) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$87.80 ($100.97 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7309TRPBF
Order Code2468006RL
Also Known AsSP001554164
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.05ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.05ohm
Drain Source On State Resistance P Channel0.05ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation Pd1.4W
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.05ohm
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance N Channel
0.05ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.05ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.4W
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000277