IRF7389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm
4,000 more incoming. You can reserve stock now
| Quantity | Price (Incl GST) |
|---|---|
| 50+ | $1.070 ($1.2305) |
| 250+ | $0.873 ($1.0039) |
| 1000+ | $0.757 ($0.8706) |
| 2000+ | $0.737 ($0.8476) |
Product Information
Product Overview
The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Fully avalanche rated
- 30V P channel and -30V N channel drain to source voltage
- 7.3A P channel and -5.3A N channel continues drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Complementary N and P Channel
30V
7.3A
0.023ohm
7.3A
0.023ohm
10V
SOIC
2.5W
2.5W
-
-
No SVHC (21-Jan-2025)
Complementary N and P Channel
30V
30V
7.3A
Surface Mount
0.023ohm
1V
8Pins
2.5W
150°C
-
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate